schottky barrier diode rb160m-60 ? applications ? dimensions (unit : mm) ? land size figure (unit : mm) general rectification ? features 1)small power mold type. pmdu 2)low i r 3)high reliability ? construction silicon epitaxial planar ? structure ? taping specifications (unit : mm) ? absolute maximum ratings (ta=25c) symbol unit v rm v v r v io a i fsm a tj ? c tstg ? c ? electrical characteristic (ta=25c) symbol min. typ. max. unit v f - 0.49 0.55 v i f =1.0a i r - 7.0 50 av r =60v ct - 40 - pf v r =10v , f=1mhz forward voltage reverse current capacitance between terminals conditions storage temperature ? 40 to ? 150 (*1)mounting on epoxi board. 180half sine wave parameter forward current surge peak 60hz ?1cyc 30 junction temperature 150 reverse voltage (dc) 60 average rectified forward current 1 parameter limits reverse voltage (repetitive) 60 pmdu 1.2 3.05 0.85 4.00.1 2.00.05 1.550.05 1.810.1 4.00.1 1.00.1 3.50.05 1.750.1 8.00.2 0.250.05 1.5max 3.710.1 rohm : pmdu jedec :sod-123 manufacture date 0.90.1 1.60.1 2.60.1 3.50.2 0.80.1 0.10.1 0.05 1/3 2011.04 - rev.e data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
rb160m-60 0 5 10 15 20 25 30 ave:11.7ns ta=25 if=0.5a ir=1a irr=0.25*ir n=10pcs forward voltagevf(mv) vf-if characteristics forward current:if(a) reverse current:ir(ua) reverse voltagevr(v) vr-ir characteristics capacitance between terminals:ct(pf) reverse voltage:vr(v) vr-ct characteristics vf dispersion map forward voltage:vf(mv) reverse current:ir(ua) ir dispersion map capacitance between terminals:ct(pf) ct dispersion map ifsm disresion map peak surge forward current:ifsm(a) peak surge forward current:ifsm(a) number of cycles ifsm-cycle characteristics peak surge forward current:ifsm(a) time:t(ms) ifsm-t characteristics time:t(s) rth-t characteristics transient thaermal impedance:rth (/w) forward power dissipation:pf(w) average rectified forward currentio(a) io-pf characteristics trr dispersion map reverse recovery time:trr(ns) 0.001 0.01 0.1 1 0 100 200 300 400 500 600 ta=-25 ta=125 ta=75 ta=25 0.01 0.1 1 10 100 1000 10000 0 102030405060 ta=125 ta=75 ta=25 ta=-25 1 10 100 1000 0 5 10 15 20 25 30 f=1mhz 480 490 500 510 520 530 ave:495.1mv ta=25 if=1a n=30pcs 0 10 20 30 40 50 60 70 80 90 100 ta=25 vr=60v n=30pcs ave:6.966ua 0 10 20 30 40 50 60 70 80 90 100 ave:37.9pf ta=25 f=1mhz vr=10v n=10pcs 0 50 100 150 ave:85.0a 8.3ms ifsm 1cyc 0 50 100 1 10 100 8.3ms ifsm 1cyc 8.3ms 0.1 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j-a) rth(j-c) mounted on epoxy board 1ms im=10ma if=0.5a 300us time 0 0.5 1 1.5 00.511.52 dc d=1/2 sin(?180) 0 50 100 150 200 1 10 100 t ifsm 2/3 2011.04 - rev.e www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rb160m-60 0 0.05 0.1 0.15 0.2 0 102030405060 reverse power dissipation:p r (w) reverse voltage:vr(v) vr-p r characteristics ambient temperature:ta() derating curve?(io-ta) average rectified forward current:io(a) average rectified forward current:io(a) case temparature:tc() derating curve?(io-tc) sin(?180) dc d=1/2 0 0.5 1 1.5 2 2.5 3 0 255075100125150 sin(?180) dc d=1/2 0 0.5 1 1.5 2 2.5 3 0 25 50 75 100 125 150 sin(?180) dc d=1/2 t tj=150 d=t/t t vr io vr=30v 0a 0v 0 5 10 15 20 25 30 c=200pf r=0 c=100pf r=1.5k ave:5.70kv no break at 30kv electrostatic discharge test esd(kv) esd dispersion map t tj=150 d=t/t t vr io vr=30v 0a 0v 3/3 2011.04 - rev.e www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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